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Tuesday, July 28, 2020 | History

2 edition of Silicon carbide, a high temperature semiconductor found in the catalog.

Silicon carbide, a high temperature semiconductor

Conference on Silicon Carbide (1959 Boston, Mass.)

Silicon carbide, a high temperature semiconductor

proceedings...

by Conference on Silicon Carbide (1959 Boston, Mass.)

  • 173 Want to read
  • 33 Currently reading

Published by Pergamon in Oxford .
Written in English


Edition Notes

Statemented. by J.R. O"Connor and J. Smiltens.
ContributionsO"Connor, J R., Smiltens, J., United States. Air Force. Cambridge Research Center.
The Physical Object
Pagination521p.
Number of Pages521
ID Numbers
Open LibraryOL14137679M

Silicon carbide (SiC) or carborundum is a synthetic abrasive manufactured through the fusion of high-grade silica sand and finely ground carbon (petroleum coke) in an electric furnace at high temperature (–°C). The process generates both particles and fibers of silicon carbide as well as quartz and cristobalite silica, all of which may become airborne in the workplace during manufacture.   Silicon Carbide - Materials, Processing and Devices: Volume (MRS Proceedings) [Dudley, Michael, Johnson, C. Mark, Powell, Adrian R., Ryu, Sei-Hyung] on *FREE* shipping on qualifying offers. Silicon Carbide - Materials, Processing and Devices: Volume (MRS Proceedings).

Silicon carbide is a semiconductor in research and early mass production providing advantages for fast, high-temperature and/or high-voltage devices. The first devices available were Schottky diodes, followed by junction-gate FETs and MOSFETs for high-power switching. Bipolar transistors and thyristors are currently developed.   This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics Reviews: 4.

1. Silicon carbide: a high temperature semiconductor: proceedings of the conference on silicon carbide: Boston, Mass., April , sponsored by the Electronics Research Directorate, Air Force Cambridge Research Center, Bedford: 1. Read about 'Tech Spotlight: Silicon Carbide Technology' on elementcom. Silicon carbide (SiC) is a compound of carbon and silicon atoms. It is a very hard and strong material with a very high melting point. Hence, it is used.


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Silicon carbide, a high temperature semiconductor by Conference on Silicon Carbide (1959 Boston, Mass.) Download PDF EPUB FB2

Silicon Carbide: a High Temperature Semiconductor Unknown Binding – January 1, out of 5 stars 1 rating See all formats and editions Hide other formats and editions5/5(1). This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology.

The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology/5(4).

Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices.

Get this from a library. Silicon carbide, a high temperature semiconductor; proceedings. [J R O'Connor; J Smiltens; Air Force Cambridge Research Laboratories (U.S.). Silicon carbide, a high temperature semiconductor. (OCoLC) Material Type: Government publication, National government publication: Document Type: Book: All Authors / Contributors: J Anthony Powell; Lewis Research Center.

About this book A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the s and s, the first SiC Schottky barrier diodes (SBDs) were released.

Wide variation in carrier concentration (electron or hole) in a semiconductor exposed to increasing temperature with reference to (a), (b), (c), (d) energy band diagrams for an n-type semiconductor at 0 K, low temperature temperature ~ K and high temperature ~ K, respectively; (e), (f), (g), (h) corresponding band.

Metal-oxide-semiconductor (MOS) transistors are limited by the stability of the oxide layer to temperatures of °C and less.

Table 1: Comparison of high-temperature opamps in silicon carbide. Silicon carbide (SiC) has always been considered as an excellent material for high temperature and high power devices. Since SiC is the only compound semiconductor whose native oxide is silicon dioxide (SiO 2), it puts SiC in a unique position.

Although SiC metal oxide semiconductor (MOS) technology has made significant progress in. Books Journals Engineering Research. Applied Mechanics and Materials Advances in Science and Technology International Journal of Engineering Research in Africa Advanced Engineering Forum Journal of Biomimetics, Biomaterials and Biomedical Engineering Materials Science.

Silicon carbide allows for high-temperature devices because of its wide bandgap. In ordinary silicon, high temperatures can kick electrons into the conduction band, causing errant currents to flow. Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.

No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. Silicon Carbide (SiC) semiconductors, solutions to improve efficiency, smaller form factor and higher operating temperature in industrial and aerospace.

Silicon carbide (SiC) is a robust and hard material, first used as a cutting material in the nineteenth century and later as a high-temperature semiconductor for advanced applications in the twentieth century.

This chapter reviews the basic material structure of SiC and describes the various forms of SiC that are in use today. This work presents silicon carbide grown on silicon and then transferred onto polyimide substrate as a new platform for flexible sensors for hostile environments.

Combining the excellent electrical properties of SiC and high temperature tolerance of polyimide, we demonstrated for the first time a flexible SiC sensors that can work above  °C. Silicon carbide (SiC), also commonly known as carborundum, is a compound of silicon and carbon. Apart from being an excellent abrasive, SiC is also used in the manufacture of semiconductor process equipment.

SiC is a very hard material and is thermally stable up to °C. Carrier concentration is a function of thermal energy. Additional Physical Format: Print version: Powell, J. Anthony. Silicon carbide, a high temperature semiconductor.

(OCoLC) Microfiche: Powell, J. Anthony. Silicon carbide (SiC) has a wide bandgap of 3 electronvolt (eV) and a much higher thermal conductivity compared to silicon. SiC based MOSFETs are most suited for high breakdown, high power applications that operate at high frequency.

Compared to silicon, the device parameters such as for example the R DS (on) change less with temperature. SiC wafer (Silicon Carbide Wafers) is a semiconductor material of ploytype 4H & 6H used in research & manufacturing industries. PWAM develops & produces large size substrates, silicon wafer using high-tech materials in its laboratory.

Our main aim is to produce the best silicon wafer for you. Silicon carbide is a well-known wide-bandgap semiconductor traditionally used in power electronics and solid-state lighting due to its extremely low intrinsic carrier concentration and high thermal conductivity.

What is not as well known is its compatibility with the biological world. Silicon carbide (SiC) is one of the candidate materials for use in the first-wall and blanket component of fusion reactors, and is used in nuclear fuel particle coatings for high-temperature gas-cooled reactors. Any effect of irradiation upon its oxidation behavior would be important technologically.Silicon carbide’s ability to function in high temperature, high power, and high radiation conditions will enable important performance enhancements to a wide variety of systems and applications.Silicon is a chemical element with the symbol Si and atomic number It is a hard, brittle crystalline solid with a blue-grey metallic lustre, and is a tetravalent metalloid and is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, and lead are below it.

It is relatively unreactive. Because of its high chemical affinity for oxygen, it was not.